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The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes

✍ Scribed by Yang, Hyunsoo; Yang, See-Hun; Parkin, Stuart


Book ID
121076886
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
613 KB
Volume
2
Category
Article
ISSN
2158-3226

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## Abstract The influence of seed‐buffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SV‐MTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b