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The role of impurities in the formation of quenched-in recombination centres in thermally treated silicon

✍ Scribed by Glinchuk, K. D. ;Litovchenko, N. M. ;Merker, R.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of quenching rate and annealing o

✍ Glinchuk, K. D. ;Litovchenko, N. M. ;Merker, R. 📂 Article 📅 1976 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB

Influence of Germanium on the Formation

✍ Glinchuk, K. D. ;Litovchenko, N. M. ;Ptitsin, V. Yu. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 240 KB

Structure and formation kinetics of oxyg

✍ Glinchuk, K. D. ;Litovchenko, N. M. ;Salntik, Z. A. 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 326 KB

Influence of carbon and preannealing on

✍ Borimskii, V. V. ;Glinchuk, K. D. ;Litovhenko, N. M. ;Salnik, Z. A. 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 360 KB

The Role of Group-V Impurities in Defect

✍ Awadelkarim, O. O. ;Henry, A. ;Monemar, B. ;Lindström, J. L. 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 558 KB

On the A-Centre Formation in Heat-Treate

✍ Emtsev, V. V. ;Khramtsov, V. A. ;Schmalz, K. 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 243 KB