The role of electron trap creation in enhanced hot-carrier degradation during AC stress (n-channel MOSFET)

✍ Scribed by K. Mistry; B. Doyle

• Book ID: 126596644
• Publisher: IEEE
• Year: 1990
• Tongue: English
• Weight: 284 KB
• Volume: 11
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/55.55276