The relationship between $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )^2$ and crystalline volume fraction in microcrystalline silicon growth
✍ Scribed by Chantana, Jakapan ;Higuchi, Takuya ;Nagai, Tomoyuki ;Sasaki, Shota ;Sobajima, Yasushi ;Toyama, Toshihiko ;Sada, Chitose ;Matsuda, Akihisa ;Okamoto, Hiroaki
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 266 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Optical‐emission‐intensity ratio of $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )$ during film growth has been used as a simple indicator to predict crystallinity (crystal‐volume fraction: X~C~) in the resulting microcrystalline silicon (µc‐Si:H) thin films. The relationship between $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )$ and X~C~ has been checked under a wide variety of film‐preparation conditions including low‐deposition‐rate (<0.1 nm/s) and high‐deposition‐rate (>5 nm/s) cases. On the basis of theoretical consideration, we have proposed optical‐emission‐intensity ratio of $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )^2 $ as a new indicator of X~C~ during film growth of µc‐Si:H.