The Relation between Exciton Localization and Luminescence Spectra for Disordered Quantum Wells

✍ Scribed by U. Jahn; H.T. Grahn

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 380 KB
• Volume: 234
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200211)234:1<443::aid-pssb443>3.0.co;2-r

✦ Synopsis

Dedicated to Professor Dr. Roland Zimmermann on the occasion of his 60th birthday

We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and m-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.