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The Red (1.8 eV) Luminescence in Epitaxially Grown GaN

✍ Scribed by Hofmann, D.M. ;Meyer, B.K. ;Alves, H. ;Leiter, F. ;Burkhard, W. ;Romanov, N. ;Kim, Y. ;Kr�ger, J. ;Weber, E.R.

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 91 KB
Volume: 180
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200007)180:1<261::aid-pssa261>3.0.co;2-2

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✦ Synopsis

The 1.8 eV luminescence band in GaN grown by molecular beam epitaxy is studied by photo-luminescence (PL) and magnetic resonance. Optically detected magnetic resonance (ODMR) shows that deep centres with g = 1.98 and g = 2.01 are involved in the recombination. The results of the PL experiments indicate that the 1.8 eV recombination can be further fed by shallow centres like shallow donors or excitons.