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The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure

โœ Scribed by J.D. Lambkin; D.J. Dunstan; E.P. O'Reilly; B.R. Butler


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
485 KB
Volume
93
Category
Article
ISSN
0022-0248

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The Hydrostatic Pressure Dependence of t
โœ A. F. Phillips; S. J. Sweeney; A. R. Adams; P. J. A. Thijs ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 191 KB ๐Ÿ‘ 1 views

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.