𝔖 Bobbio Scriptorium
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The preparation and properties of vapor-grown In1−xGax P

✍ Scribed by Nuese, C. J. ;Richman, D. ;Clough, R. B.

Book ID
112818443
Publisher
Springer-Verlag
Year
1971
Weight
591 KB
Volume
2
Category
Article
ISSN
0026-086X

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## Abstract The effects of water vapor introduction during the growth of Cu(In~1–__x__~ Ga~__x__~ )Se~2~, specifically CuInSe~2~ (CISe), Cu(In,Ga)Se~2~ (CIGSe), and CuGaSe~2~ (CGSe) thin films were studied. We have developed thus far a novel technique to improve CIGSe (__x__ ∼ 0.5) cell performance