The effect of localised perturbations due to defects on the density of free carrier states in graphite is calculated. It is found, for defect concentrations < 10m2, that the density of states curve for impure graphite differs at most by a few per cent from that of the pure material.
β¦ LIBER β¦
The perturbed electronic density of states in graphite
β Scribed by A.D. Boardman; I.I. Darby; E. Micah
- Publisher
- Elsevier Science
- Year
- 1972
- Tongue
- English
- Weight
- 139 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0008-6223
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β¦ Synopsis
by forming aluminum carbide layer between graphite and aluminum. The df/dV-V characteristics is quite similar to the state density near the Fermi level of graphite as calculated by McClure, unlike the case of Bi-metal junction. This result is explained by the two-dimensional nature of graphite, which makes the curve directly proportional to the state density.
- The perturbed electronic density of states in graphite
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