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The Optical Interband Transitions of the Semiconductor CuGaO2

✍ Scribed by Benko, F. A. ;Koffyberg, F. P.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
274 KB
Volume
94
Category
Article
ISSN
0031-8965

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The optical absorption edge of B 48 Al 3 C 2 has been measured. It is decomposed into several interband transitions between 0.97 and 2.5 eV. Additionally, several gap-state-related transitions with energies between 0.45 and 0.96 eV were determined. They are attributed to defects in the structure, wh