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The optical center MnO3−4 in Y2SiO5:Mn, X (XAl, Ca)

✍ Scribed by U. Hömmerich; H. Eilers; W.M. Yen; H.R. Verdún

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 426 KB
Volume: 213
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(93)85435-q

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✦ Synopsis

We report spectroscopic investigations of Mns+ doped in a new host material, namely Y&GO5 (YSO). The 5 + valence state of manganese was obtahxd by employing two charge compensation schemes: Cs replscing Y and Al substituting for Si. Near-infrared hmkescence peaking at around 1160 nm was observed at room temperature with a lifetime of 69.5 us. At low temperatures the lifetime increased significantly to 604.5 ns and two electronic origins were resoked at 116 1.1 nm (86 I 3 cm-' ) and 1169.7 nm (8562 cm-r). The electron origins are assigned to the orbital components of the spin-fo~idden transition 'E--+3Az fTd notation).

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