The nitrogen content of type Ib synthetic diamond
โ Scribed by Woods, G. S.; Van Wyk, J. A.; Collins, A. T.
- Book ID
- 111689167
- Publisher
- Taylor and Francis Group
- Year
- 1990
- Tongue
- English
- Weight
- 453 KB
- Volume
- 62
- Category
- Article
- ISSN
- 1364-2812
No coin nor oath required. For personal study only.
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## Abstract The presence of nitrogen or other impurities in HPHT type Ib synthetic diamond may produce shallow or deep localized trapping states for electrons (holes) with activation energies below the conduction (above the valence) band. The present work deals with room temperature afterglow (AG),
## Abstract It is known that room temperature betaโirradiated Ib type diamond generates a nonโreproducible TL glow curve shape, due to mobility of the impurityโvacancy (__I__ โ__V__) and interstitials (I) defects in the 30โ800 ยฐC temperature range. This situation may hinder the use of this type of