Influence of Si(111) √3×√3 - R30 ° -Sb s
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Dmitry L. Goroshko; Konstantin N. Galkin; Nikolay G. Galkin
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Article
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2011
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Elsevier
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English
⚖ 312 KB
Using electron energy loss spectroscopy, Raman spectroscopy, and conductance measurements in the temperature range 20-500 K we have investigated doping of two-dimensional Mg silicide using the Sb surface phase. The doping process was performed in two steps including formation of the Sb surface phase