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The mechanism of the oxygen annealing in gold surface barriers on CdSxSe1−x devices

✍ Scribed by A.M. Al-Dhafiri; A.A.I. Al-Bassam

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
242 KB
Volume
33
Category
Article
ISSN
0927-0248

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✦ Synopsis

CdSxSel_ x (x = 0.5) single crystal were grown using vapour phase technique. Gold surface barriers on this alloy have been investigated. The electrical characteristics were studied as a function of air annealing. From the analysis of C-2-V and I-V characteristics, the values of barrier height, diffusion potential and Fermi level were found to increase from 1.06 eV, 0.153 eV, and 1.239 eV to 1.58 eV, 0.189 eV, and 1.795 eV, respectively, after air annealing at 200°C for 2 min. This increase was associated with a reduction in the value of carrier concentration (from 1.48 × 1015 to 0.36 × 1015 cm -3) and an ideal value of the ideality factor was obtained. The result are interpreted on the basis of the role of oxygen at the junction using Schottky theory.

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