𝔖 Bobbio Scriptorium
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The mechanism of the enhancement in divacancy production by oxygen during electron irradiation of silicon. I. Experimental: L J Lindström et al,J Appl Phys, 53 (12), 1982, 8686–8690


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
175 KB
Volume
35
Category
Article
ISSN
0042-207X

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