✦ LIBER ✦
The measurement and sources of substrate heat flux encountered with magnetron sputtering: Walter Class and Robert Hieronyml Solid St. Technol. 55 (December 1982)
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 93 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
Low temperature processed MOSFET's using laser recrystalized polycr~slalline silicon films IlAN-SHENG LEE SolidSt. Electron 26 (11), 1123 (1983) An n-channel MOS transistor was fabricated on a laser recrystallized polycrystaline silicon film at temperatures below 630~ The gate oxide was sputter deposited at 200~ Lasers were used for substrate recrystallization, implantation damage annealing and dopant drive-in. An electron field effect mobility higher than 100cm"/V.sec was observed on the finished transistors. With 10 V applied to the gate of the transistor for 2 hr, less than a 20 m V shift in threshold voltage was observed.