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The lower critical field Hc1 of V3Si

✍ Scribed by D. Eckert; K.H. Berthel

Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 187 KB
Volume: 15
Category: Article
ISSN: 0011-2275
DOI: 10.1016/0011-2275(75)90024-7

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✦ Synopsis

The temperature dependence of the lower critical field He/of V3Si single crystals was investigated. Measurements were carried out using an alternating field method. Superposition of a small alternating field onto an outer magnetic field arising linearly in time makes it possible to detect flux changes in hard superconductors with a high degree of sensitivity.

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