The kinetics of thin film resistor stabilisation

✍ Scribed by I.A. Goldberg; I.E. Klein; M. Hershkovich

• Book ID: 104157716
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 219 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(88)80183-6

✦ Synopsis

Thin film resistors are manufactured by photolithography methods, using a nickelchromium alloy vacuum deposited on a ceramic substrate. In order to stabilise the resistors, a high temperature heat treatment in an air furnace is undertaken, during which the resistors are partially oxidised. It was found that the extent of reaction can be expressed as p = 6 x 104 exp (-7400/T) t 1/3 A temperature of 325~ is recommended for practical applications. It involves a 30% resistance increase after an hour, while standard deviation is less than 2%.