Ground and Excited States of an Icosahed
β
M. Fujimori; K. Kimura
π
Article
π
1997
π
Elsevier Science
π
English
β 306 KB
From many experimental studies, a localized intrinsic acceptor level is assumed to exist at about 0.2 eV above the valence band edge in -rhombohedral boron. The acceptor level has been tentatively originated from the unoccupied intracluster bonding level split away from the valence band due to the d