We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top
✦ LIBER ✦
The interaction of Fe on MgO(1 0 0) surfaces
✍ Scribed by Cs. Fetzer; I. Dézsi; I. Szűcs; F. Tanczikó; A.G. Balogh
- Book ID
- 108280772
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 349 KB
- Volume
- 603
- Category
- Article
- ISSN
- 0039-6028
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