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The influence of vacuum annealing temperature on the fundamental absorption edge and structural relaxation ofa-SiC:H films

✍ Scribed by A. V. Vasin; A. V. Rusavsky; V. S. Lysenko; A. N. Nazarov; V. I. Kushnirenko; S. P. Starik; V. G. Stepanov

No coin nor oath required. For personal study only.

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