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The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure

✍ Scribed by Bykhovski, Alexei; Gelmont, Boris; Shur, Michael

Book ID
111910585
Publisher
American Institute of Physics
Year
1993
Tongue
English
Weight
835 KB
Volume
74
Category
Article
ISSN
0021-8979

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✍ Gamarra, Piero ;Lacam, Cedric ;Magis, Michelle ;Tordjman, Maurice ;Poisson, Mari 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 452 KB

## Abstract During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in