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The influence of the growth temperature on residual impurities in SSD-GaP

✍ Scribed by Dr. P. Kirsten; Dr.; Ing. H. Koil; Dr. W. Siegel

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
414 KB
Volume
20
Category
Article
ISSN
0232-1300

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## Abstract Sexiphenyl thin films were grown by Hot Wall Epitaxy on air‐cleaved mica (001) surfaces at substrate temperatures between 293 K and 440 K. For the entire temperature range, organic thin films show nano‐needle like morphology. The nano‐needles grown at low substrate temperature (293 K) a