The influence of passivation on the kinetics of the dissolution of iron—I. Outer layer of the passivating film as a heavy doped thin semiconductor and mott-schottky equation

✍ Scribed by A.M. Sukhotin; M.S. Grilikhes; E.V. Lisovaya

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 348 KB
• Volume: 34
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(89)87073-2

✦ Synopsis

By the Poisson equation solution using Fermi-Dirac statistics for a degenerate electron gas a formula for calculation of doping density N z lOi cnm3 and flat band potential E, at 300 K is derived according to the Mott-Schottky equation. The relationships for estimation of the depletion band bending and minimum thickness of the passivating film, when, as in the case mentioned above the C-'(E) functions should be linear, are presented.