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The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD

โœ Scribed by A.Y. Polyakov; A.A. Chelniy; N.B. Smirnov; A.V. Govorkov; A.G. Milnes; Xiaolei Li; A.N. Aluev; P.B. Orlov

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
311 KB
Volume
38
Category
Article
ISSN
0921-5107

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๐Ÿ“œ SIMILAR VOLUMES

Influence of the TEGa flow on the optica
Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD
โœ Shanjin Huang; Bingfeng Fan; Yulun Xian; Zhiyuan Zheng; Zhisheng Wu; Hao Jiang; ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 789 KB

We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photo