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The Influence of Minority Carrier Injection on Subthreshold Defects in Silicon

โœ Scribed by Yunusov, M. S. ;Abdurakhmanova, S. N. ;Zaikovskaya, M. A. ;Oksengendler, B. L.


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
228 KB
Volume
81
Category
Article
ISSN
0031-8965

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Effect of nitrogen doping on the minorit
โœ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si