The influence of light- and heavy-ion irradiation on the structure, resistivity, and superconducting transition temperature of V3Si. A comparative study

✍ Scribed by O. Meyer; G. Linker

• Publisher: Springer US
• Year: 1980
• Tongue: English
• Weight: 558 KB
• Volume: 38
• Category: Article
• ISSN: 0022-2291
• DOI: 10.1007/bf00115501

✦ Synopsis

Channeling and x-ray diffraction measurements on Kr-and He-irradiated

VsSi single crystals and films reveal different damage levels for fluences in cases where the superconducting transition temperature Tc has been reduced by the same amount. This indicates that only special defect structures are responsible for the To-reduction mechanism. In the fluence region where Tc is decreasing, Tc correlates with residual resistivity Po, independent of the kind of irradiation. However, at particle fluences where Tc saturation occurs, different saturation values of po are observed. The exponential decrease and the saturation of T~ with fluence are explained by a similar behavior Of po versus fluence in the damage production and saturation processes. The increase of the lattice parameter is not uniquely dependent on the decrease of To, but also on the amount of damage present.