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The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

✍ Scribed by Aronov, D. A. ;Isamukhamedova, D. K. ;Yuabov, Yu. M.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
400 KB
Volume
95
Category
Article
ISSN
0031-8965

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The metal-semiconductor solar cell offers a simple structure to determine the photovoltaic behaviour of novel semiconductors, such as thin films of hydrogenated amorphous silicon (a-Si:H). It is known that solar cells made from this semiconductor must contain a wide built-in field region to collect