The Influence of Hydrostatic Pressure on Electrical Conductivity of CdS Single Crystals

✍ Scribed by K. W. Böer; E. Gutsche; E. Jahne

• Publisher: John Wiley and Sons
• Year: 1963
• Tongue: English
• Weight: 492 KB
• Volume: 3
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.19630030511

✦ Synopsis

Abstract

The influence of hydrostatic pressure up to 12000 atm on the semiconductivity, and the spectral distribution of photoconductivity and photoquenching is measured. The pressure coefficient of the semiconductivity of high‐conductivity CdS is found to be caused by the pressure coefficient of the mobility only, and indicates ionized impurity and optical phonon scattering at room temperature. For low‐conductivity CdS the pressure coefficient is about two orders of magnitude higher, and can be explained by the pressure shift of the ionization energy of the levels controlling the conductivity. The shifts, with pressure, of the maximum of the spectral distribution of the photocurrent and the absorption edge are about equal. The decrease of photocurrent is interpreted as due to the influence of pressure on the recombination mechanism. A comparable small additional shift of the photocurrent maximum can be explained by the differing influence of pressure on recombination in the intrinsic and extrinsic ranges.