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The influence of heat-dissipation and temperature fluctuations on SbSI crystallization in thin layers

✍ Scribed by R. N. Sheftal; K. V. Nikitin; Y. S. Savitskaya


Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
228 KB
Volume
8
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

Single crystal films of SbSI 5 to 100 ΞΌ in thickness have been obtained by crystallization from melts in a close spacing. The films crystallized under conditions under conditions of direct heat ‐dissipation and periodical fluctuations of temperature near the melting point. The phase transition in the films was revealed by means of capacity measurements at temperatures of ∼ 20 Β°C.


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