The influence of grain boundaries on dc and ac conductivities of polycrystalline RbAg,I, and Ag,SBr was studied in the temperature range 15 K < T < 298 K using low-frequency EIS and high-frequency waveguide measurements. A change of the ion conduction mechanism is found at a transition temperature i
The influence of grain-boundaries on the conductivity and ion-exchange rate of β″ -alumina polycrystalline isomorphs
✍ Scribed by Aichun Tan; Chu Kun Kuo; Patrick S. Nicholson
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 777 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0167-2738
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📜 SIMILAR VOLUMES
The effective minority carrier lifetime in polycrystalline semiconductors is determined in terms of the grain size and the recombination velocity at the grain boundaries. The effect of the grain boundaries is to reduce the effective lifetime when the grain size is smaller than few diffusion lengths.
Aluminum oxide (Al 2 O 3 ) thin films are synthesized by reactive d.c. magnetron sputter deposition on silicon substrates. The impact of varying plasma power P p (i.e. 400 to 1000 W) and of thin film temperatures T up to 540 °C on the electrical performance are evaluated, as these dielectric layers