In this work we report on the structure and magnetic and electrical transport properties of CrO 2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO 3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 ยฐC, and oxygen carrier gas f
โฆ LIBER โฆ
The Influence of AsCl3 Impurity on Growth Mechanism and Structure Perfection of Autoepitaxial Germanium Films
โ Scribed by A. N. Stepanova; Prof. N. N. Sheftal
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 519 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0232-1300
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โฆ Synopsis
The changes of film morphology and microtwin concentration in these films caused by AsC1, impurity have been studied. The correlation of growth mechanism and structure perfection of the films has been revealed.
Es werden die durch Verunreinigungen von AsCI, verursachten VerBnderungen der Filmmorphologie und der Haufigkeit der Mikrozwillinge in diesen Filmen untersucht und die Beziehungen zwischen Wachstumsmechanismus und Strukturperfekt,ion der Filme aufgezeigt.
๐ SIMILAR VOLUMES
Influence of Growth Temperature and Carr
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P.โM. Sousa; S.โA. Dias; O. Conde; A.โJ. Silvestre; W.โR. Branford; B. Morris; K
๐
Article
๐
2007
๐
John Wiley and Sons
๐
English
โ 576 KB