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The improvements of GaN p–i–n UV sensor on 1° off-axis sapphire substrate

✍ Scribed by Su-Sir Liu; Pei-Wen Li; W.H. Lan; Wen-jen Lin


Book ID
108215195
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
377 KB
Volume
121
Category
Article
ISSN
0921-5107

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The improvement of GaN p-i-n UV sensor b
✍ Su-Sir Liu; Pei-Wen Li; W.H. Lan; Yi-Cheng Cheng 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 340 KB

GaN with pairs of AlGaN/GaN superlattices (SLs) structure for p-i-n UV photo detector are fabricated on sapphire by metal organic chemical vapor deposition (MOCVD). For 8-pair AlGaN/GaN SLs not only eliminates cracking through this strain management, but it also significantly decreases the threading