The improvement of GaN p-i-n UV sensor b
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Su-Sir Liu; Pei-Wen Li; W.H. Lan; Yi-Cheng Cheng
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Article
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2006
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Elsevier Science
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English
⚖ 340 KB
GaN with pairs of AlGaN/GaN superlattices (SLs) structure for p-i-n UV photo detector are fabricated on sapphire by metal organic chemical vapor deposition (MOCVD). For 8-pair AlGaN/GaN SLs not only eliminates cracking through this strain management, but it also significantly decreases the threading