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The Improvement of Low Temperature Mobility of InAs0.04Sb0.96 Epilayers with Cut Off Wavelength of 12.5 μm by Annealing

✍ Scribed by Y. Gao; H. Kan; T. Yamaguchi


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
138 KB
Volume
35
Category
Article
ISSN
0232-1300

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