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The impact of the nitridation process on the properties of the Si–SiO2 interface

✍ Scribed by M.L. Polignano; M. Alessandri; B. Crivelli; R. Zonca; A.P. Caricato; M. Bersani; M. Sbetti; L. Vanzetti


Book ID
117144718
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
406 KB
Volume
280
Category
Article
ISSN
0022-3093

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The peculiarities of Si/SiO2 interfaces
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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp