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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

✍ Scribed by Oliver, R. A.; Massabuau, F. C.-P.; Kappers, M. J.; Phillips, W. A.; Thrush, E. J.; Tartan, C. C.; Blenkhorn, W. E.; Badcock, T. J.; Dawson, P.; Hopkins, M. A.; Allsopp, D. W. E.; Humphreys, C. J.

Book ID
121278624
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
870 KB
Volume
103
Category
Article
ISSN
0003-6951

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Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 Β± Β±6 to 10 Β± Β±1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp