Contribution of the imaginary part of th
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T. Noguchi; T. Suzuki; A. Endo; T. Tamura
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Article
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2009
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Elsevier Science
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English
β 305 KB
The dc I-V characteristics of Nb/AlΓAlO x /Nb SIS junctions are numerically investigated taking into account the broadening of quasiparticle density of states for Nb. It is demonstrated that calculated dc I-V curves agree well with those of Nb/AlΓAlO x /Nb SIS junctions measured at 4.2 K. It is also