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The growth of a deposited layer on a cold surface

✍ Scribed by Paul A. Libby; Chen Shun

Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
812 KB
Volume
8
Category
Article
ISSN
0017-9310

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πŸ“œ SIMILAR VOLUMES

Diffusion Barrier Deposition on a Copper
Diffusion Barrier Deposition on a Copper Surface by Atomic Layer Deposition
✍ K.-E. Elers; V. Saanila; P. J. Soininen; W.-M. Li; J. T. Kostamo; S. Haukka; J. πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 247 KB

Diffusion barrier materials, TiN and WN, were deposited by atomic layer deposition (ALD). The chlorine concentration of the TiN film was as low as 1.2 at.-%, and resistivity was below 200 lX cm. Ultra high aspect ratio (AR = 85) trenches were used to assess step coverage. Tungsten nitride film, depo