## Abstract A review is presented of work over the last 10 years which has been aimed at trying to produce a Siβbased THz quantum cascade laser. Potential THz applications and present THz sources will be briefly discussed before the materials issues with the Si/SiGe system is discussed. Waveguide d
The growth and measurement of terahertz quantum cascade lasers
β Scribed by Suraj P. Khanna; Subhasish Chakraborty; Mohamed Lachab; Nicholas M. Hinchcliffe; Edmund H. Linfield; A. Giles Davies
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 274 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
β¦ Synopsis
Results are presented for two GaAs/AlGaAs quantum cascade laser (QCL) structures that emit at frequencies of 2.59 and 2.75 THz. Both structures have a nominally identical, bound-to-continuum active region design, and the difference between their emission frequencies is interpreted as resulting from small differences in the gallium and aluminium growth rates, which were measured both before and after laser growth using a pyrometric spectrometry technique. The same technique allows the QCL growth itself to be monitored real-time, and drifts in growth rates identified.
π SIMILAR VOLUMES
We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% -in a set of 5 MBE-grown samplesemis