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The growth and characterization of device quality InP/ Ga1-xinxasyp1-ydouble heterostructures by atmospheric-pressure MOVPE using trimethylindium

✍ Scribed by A. Mircea; R. Mellet; B. Rose; D. Robein; H. Thibierge; G. Leroux; P. Daste; S. Godefroy; P. Ossart; A-M. Pougnet


Book ID
112816997
Publisher
Springer US
Year
1986
Tongue
English
Weight
719 KB
Volume
15
Category
Article
ISSN
0361-5235

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