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The generation mechanism of silicon oxide–aluminum oxide compound clusters by laser ablation of siliceous materials

✍ Scribed by Can Xu; Yingcai Long; Shixiong Qian; Yufen Li

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
207 KB
Volume
39
Category
Article
ISSN
1387-1811

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✦ Synopsis

The generation of silicon dioxide±aluminum oxide compound clusters under 308 nm XeCl excimer laser ablation of ZSM-5 zeolites with dierent SiO 2 /Al 2 O 3 ratios was studied by time-of-¯ight mass spectrometry. Two Al-containing cluster sequences [(SiO 2 ) nÀ1 (AlO 2 )] À and [(SiO 2 ) n OAl] À are observed in the negative ion channel. Through the relationship between the abundance distribution of cluster sequences and the silicon aluminum ratio, the growth mechanism of [(SiO 2 ) nÀ1 (AlO 2 )] À is discussed. Owing to the high electron anity of AlO 2 compared to small (SiO 2 ) n clusters, AlO 2 is considered to be the core of growth of the compound cluster [(SiO 2 ) nÀ1 (AlO 2 )] À .

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