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The free boundary problem of a semiconductor in thermal equilibrium

✍ Scribed by Ansgar Jüngel

Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
973 KB
Volume
18
Category
Article
ISSN
0170-4214

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✦ Synopsis

Communicated by H. Neunzert

The quasi-hydrodynamic model for semiconductor devices in thermal equilibrium admits in general solutions for which the electron or hole density vanish. These sets are called vacuum sets. In this paper estimates on the vacuum sets and a first step in the regularity of the free boundary of these sets are presented. Numerical examples, including error estimates for linear finite elements, for the devices diode, bipolar transistor and thyristor indicate that the free boundary is more regular than theoretically predicted.

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✍ Bui An Ton 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 530 KB

## Abstract The existence of a weak solution of a two‐dimensional non‐stationary free‐boundary problem related to flame propagation is established. The main feature of the problem is that the nonlinear coupling of the two parabolic equations occur on the free boundary and has exponential growth.