The formation of inorganic oxide insulators for use in ULSIs formed from organic sources

✍ Scribed by Keiji Kobayashi

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 117 KB
• Volume: 111
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2004.01.010

✦ Synopsis

It is epoch-making that we should form inorganic glasses from organic sources, which are favorable for insulators in ULSIs. The capacitance-voltage (C-V) characteristics of MOS capacitors annealed in N 2 gas were more improved than those of MOS capacitors annealed in F 2 gas. Particularly, the hysteresis and C-V curve shifts for MOS capacitors which passivated when low cation polarizable borophosphosilicate glass is applied to MOS device, showed the best properties. Low polarizable and N 2 gas-annealed glass showed good dielectric planarizing and low delay time capability as required for the step coverage of multilevel interconnections. Possible applications of these insulators to advanced MOS devices are discussed.