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The formation of alxGa1-xAs layers by regrowth on the surface of GaAs during its contact with the undersaturated liquid-containing Al

✍ Scribed by Yu.B. Bolkhovityanov; R.I. Bolkhovityanova; Yu.D. Vaulin; T.A. Gavrilova; B.Z. Olshanetsky; S.I. Stenin


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
726 KB
Volume
78
Category
Article
ISSN
0022-0248

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