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The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes

โœ Scribed by M.O Henry; E McGlynn; J Fryar; S Lindner; J Bollmann

Book ID
118564434
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
257 KB
Volume
178
Category
Article
ISSN
0168-583X

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The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi