The energy spectrum of photoelectrons emitted from a semiconductor with negative electron affinity

✍ Scribed by Sh.M. Kogan; A.F. Polupanov

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 565 KB
• Volume: 34
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(89)80009-x

✦ Synopsis

A theory of photoelectron relaxation in the surface energy well (SEW) of a semiconductor with negative electron affinity in the case when SEW is quasiclassical (moderate doping level) is developed. An expression is derived for the density of the emission current. By comparison of the shape of the calculated emission energy spectrum with the measured one it is shown that the mean escape probability of an electron with definite full energy E-=zO (corresponding to SEW) incident on the surface is of the order of l-2% and decreases as the energy approaches the vacuum level. A method is proposed for the calculation of energy levels and wave functions of an electron in one-dimensional quantum wells and the results of the calculation are presented for SEW of the parabolic form in the case. of p-GaAs with different doping levels.