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The Electrical Resistivity of Thin Pd Films Grown on Si(111)

✍ Scribed by Hloch, H. ;Wissmann, P.

Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
371 KB
Volume
145
Category
Article
ISSN
0031-8965

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## Abstract The morphology and electrical resistivity of ultrathin Al metal films grown on (111) Si substrates using molecular‐beam epitaxy have been investigated. For thickness <60 nm, the film morphology consists of a two‐dimensional network of Al islands, which grows via Volmer–Weber mechanism.