The electrical properties of planar n+−p junctions in InAs produced by S+ ion implantation

✍ Scribed by N.N. Gerasimenko; G.L. Kuryshev; A.M. Myasnikov; V.I. Obodnikov; L.N. Safronov; G.S. Khryashchev

• Book ID: 113281831
• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 347 KB
• Volume: 58
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/0168-583x(91)95585-2