The electrical properties of dislocations in silicon—I. The effects on carrier lifetime : R. H. Glaenzer and A. G. Jordan, Solid-St. Electron. 12 (1969), p. 247

• Publisher: Elsevier Science
• Year: 1970
• Tongue: English
• Weight: 100 KB
• Volume: 9
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(70)90645-1