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The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface

✍ Scribed by S. Addepalli; P. Sivasubramani; M. J. Kim; B. E. Gnade; R. M. Wallace

Book ID
107453110
Publisher
Springer US
Year
2004
Tongue
English
Weight
375 KB
Volume
33
Category
Article
ISSN
0361-5235

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The feldspars Sr 0.05 Ba 0.95 Al 2 Si 2 O 8 , BaAl 2 Ge 2 O 8 and BaGa 2 Si 2 O 8 with S.G. I2/c, and BaGa 2 Ge 2 O 8 with S.G. P2 1 /a, were studied by means of crystal structural and microstructural analyses and dielectric measurements. All the investigated densely sintered single-phase feldspars